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New for Apr. 2004Latest tech news from KINGMAX, HyunDai, LGS, Micron, Samsung, NEC, Toshiba, Siemens, Mitsubishi, Fujitsu, Hitachi, TI, ...
OCZ Pushes Speed of Enhanced Bandwidth Modules
OCZ Technology Unveils 466MHz Modules with EB Technology
(April 25, 2004)
OCZ Technology unveiled a revamped version of its "Enhanced Bandwidth" memory modules with 466MHz speed. While the latency settings of such modules are not that aggressive, OCZ promises that performance of the parts will be on par with other devices of the same kind.
OCZ's PC3700 Platinum Enhanced Bandwidth DDR memory modules are certified to function at 466MHz with CL3 2-2-8 settings, which is less aggressive setting compared to other 466MHz memory sticks available today. OCZ also pumped up the memory voltage of its new EB modules to 2.8V, which is the highest voltage bin for a lot of mainboards.
Enhanced Bandwidth (EB) technology is a set of means of increasing memory bandwidth through the optimization of memory latencies for the best possible interaction between the system memory and the chipset and memory controller. Through thorough analysis of memory traffic and benchmark results under various operating conditions as defined by different memory latency settings in the CMOS setup of the BIOS, OCZ has pinpointed the bottlenecks relevant for performance. Some conventional wisdom regarding some memory latencies were also found to no longer hold true. Using those findings, OCZ redesigned its memory products to be optimized for delivering the highest possible bandwidth to any computer system.
OCZ's Enhanced Bandwidth (EB) technology challenges conventional wisdom that implicates increased CAS latency as the main factor causing reduced effective bandwidth. OCZ engineers have shown that by reducing the latency cycles associated with the precharge-to-activate delay and the RAS-to-CAS delay along with the use of the Variable Early Read Command feature of DDR, higher effective data bandwidth is possible.
X-bit labs recently tested OCZ Technology's 400MHz memory modules with Enhanced Bandwidth technology. The results revealed that OCZ's modules with CL2.5 3-2-8 settings were able to be on par with memory modules set to CL2.
OCZ PC-3700 EB Platinum DDR modules and Dual Channel kits will begin shipping immediately. Pricing may vary. (ztj043004)
Source From : www.xbitlabs.com
Samsung Plans 2GHz GDDR3 Memory by Year End
The World's Largest Memory Maker Ramps Up GDDR3 Production
(April 20, 2004)
Being the only memory maker on the planet capable of producing GDDR3 DRAMs now, Samsung Electronics is ramping up production of high-end GDDR3 memory components to fulfill demand from its customers NVIDIA and ATI.
The GDDR3 256Mb graphics memory devices manufactured by Samsung are clocked at 500MHz, 600MHz, 700MHz and 800MHz speeds effectively providing 1000Mb/s, 1200Mb/s, 1400Mb/s and 1600Mb/s per pin bandwidth. Such memory will enable high speed 256MB and 512MB graphics cards as well as power efficient 128MB notebook solutions.
To allow speeds beyond 1.0GHz Samsung used a number of technologies developed for DDR-II and GDDR2 memories, such as On-Die Termination (ODT), Output Driver Strength adjustment by EMRS, Calibrated output drive, Pseudo Open drain compatible inputs/outputs and some other. Samsung¡¯s GDDR3 memory chips are packaged in 144-ball FBGA package and require 1.9V power supply for device operation and 1.9V power supply for I/O interface.
Samsung's high-speed GDDR3 memory chips are used on the latest graphics cards powered by the GeForce 6800 Ultra graphics processors from NVIDIA and are supposed to be installed on the forthcoming RADEON X800-series products from ATI Technologies.
There are no other memory makers to produce memory chips with effective speeds beyond 1000MHz today, but to cement its leadership position in future Samsung Electronics is to unveil GDDR3 products at speeds of about 2.0GHz (1.0GHz physical speed) by the end of the year. (ztj042104)
Source From : www.xbitlabs.com
Samsung makes breakthrough in 0.10-micron process
(Arp. 12 2004)
South Korea-based Samsung Electronics has recently improved yield rates for its 0.10-micron DRAM process after resolving problems with alumina-aluminium oxide (Al2O3) dielectric, according to sources.
A Samsung executive said the company has seen a breakthrough in the process and yield rates have improved to about 80% recently. The executive did not elaborate on the breakthrough.
The company’s DRAM allocation to Taiwan, as a result, could increase by one million 256Mbit equivalent units this month, said an IC distributor source in Taiwan.
As reported on February 10, Samsung’s DRAM production based on an unidentified process was affected by a shift from oxide-nitride-oxide (ONO) dielectric to Al2O3. A source recently suggested that the problem occurred on the company’s 0.10-micron process. (ztj170404)
Source From: www.digitimes.com
Toshiba Unveils 512Mbit Network FCRAM
(Apr. 4 2004)
Toshiba Corp. today announced the development of a series of 512Mbit Network Fast Cycle RAMs (FCRAM) with a minimum random cycle time of 22.5 nanoseconds (ns), a major move toward bringing the next higher density networking memory to market.
Toshiba and its subsidiary, Toshiba America Electronic Components Inc., said the devices are dedicated to supporting high-performance network applications, including switches and routers in network systems.
Toshiba's Network FCRAMs incorporate enhanced DRAM technology to achieve a large memory capacity and random access time rivaling the speed of SRAM. Narrowing the active memory area achieves low power consumption and a random cycle time performance more than double that of present DRAM, the company claims.
Toshiba already manufactures Network FCRAM1 and FCRAM2 in 256Mbit and 288Mbit densities, respectively. Toshiba Network FCRAM2 in 576Mbit density, designed to support parity bits for error correction, is scheduled to be available in 2005.(ztj140404)
Source from: www.reed-electronics.com
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